d a t a sh eet product data sheet 2003 oct 09 discrete semiconductors PBSS5250T 50 v, 2 a pnp low v cesat (biss) transistor ag e m3d088
2003 oct 09 2 nxp semiconductors product data sheet 50 v, 2 a pnp low v cesat (biss) transistor PBSS5250T features ? low collector-emitter saturation voltage v cesat ? high collector cu rrent capability: i c and i cm ? higher efficiency leading to less heat generation ? reduced printed-circuit board requirements ? cost effective alternative to mosfets in specific applications. applications ? power management ? dc/dc converters ? supply line switching ? battery charger ? lcd backlighting ? peripheral drivers ? driver in low supply voltag e applications (e.g. lamps and leds) ? inductive load driver (e.g. relays, buzzers and motors). description pnp biss transistor in a sot23 plastic package offering ultra low v cesat and r cesat parameters. marking note 1. * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. type number marking code (1) PBSS5250T 3h* pinning pin description 1 base 2 emitter 3 collector handbook, halfpage 2 1 3 mam256 top view 2 3 1 fig.1 simplified outline (sot23) and symbol. quick reference data symbol parameter max. unit v ceo collector-emitter voltage ? 50 v i c collector current (dc) ? 2 a i cm peak collector current ? 3 a r cesat equivalent on-resistance 150 m ordering information type number package name description version PBSS5250T ? plastic surface mounted package; 3 leads sot23
2003 oct 09 3 nxp semico nductors product data sheet 50 v, 2 a pnp low v cesat (biss) transistor PBSS5250T limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. device mounted on a fr4 printed-circuit board; si ngle-sided copper; tinplated; standard footprint. 2. device mounted on a fr4 printed-circuit board; sing le-sided copper; tinplated; mounting pad for collector 1 cm 2 . thermal characteristics notes 1. device mounted on a fr4 printed-circuit board; si ngle-sided copper; tinplated; standard footprint. 2. device mounted on a fr4 printed-circuit board; sing le-sided copper; tinplated; mounting pad for collector 1 cm 2 . symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter ? ? 50 v v ceo collector-emitter voltage open base ? ? 50 v v ebo emitter-base voltage open collector ? ? 5 v i c collector current (dc) ? ? 2 a i cm peak collector current single peak ? ? 3 a i b base current (dc) ? ? 300 ma p tot total power dissipation t amb 25 c; note 1 300 mw t amb 25 c; note 2 ? 480 mw t j junction temperature ? 150 c t amb operating ambient temperature ? 65 +150 c t stg storage temperature ? 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air; note 1 417 k/w in free air; note 2 260 k/w
2003 oct 09 4 nxp semico nductors product data sheet 50 v, 2 a pnp low v cesat (biss) transistor PBSS5250T characteristics t j = 25 c; unless othe rwise specified. note 1. pulse test: t p 300 s; 0.02. symbol parameter conditions min. typ. max. unit i cbo collector cut-off current v cb = ? 50 v; i e = 0 ? ? ? 100 na v cb = ? 50 v; i e = 0; t j = 150 c ? ? ? 50 a i ebo emitter cut-off current v eb = ? 5 v; i c = 0 ? ? ? 100 na h fe dc current gain v ce = ? 2 v; i c = 0.5 a 200 ? ? v ce = ? 2 v; i c = 1 a; note 1 200 ? ? v ce = ? 2 v; i c = 2 a; note 1 130 ? ? v cesat collector-emitte r saturation voltage i c = ? 0.5 a; i b = ? 50 ma ? ? ? 90 mv i c = ? 1 a; i b = ? 50 ma ? ? ? 180 mv i c = ? 2 a; i b = ? 100 ma ? ? ? 300 mv r cesat equivalent on-resistance i c = ? 2 a; i b = ? 200 ma; note 1 ? ? 150 m v besat base-emitter saturation voltage i c = ? 2 a; i b = ? 100 ma; note 1 ? ? ? 1.1 v v beon base-emitter turn-on voltage v ce = ? 2 v; i c = ? 1 a; note 1 ? 1.2 ? ? v f t transition frequency i c = ? 100 ma; v ce = ? 5 v; f = 100 mhz 100 ? ? mhz c c collector capacitance v cb = ? 10 v; i e = i e = 0; f = 1 mhz ? ? 35 pf
2003 oct 09 5 nxp semico nductors product data sheet 50 v, 2 a pnp low v cesat (biss) transistor PBSS5250T package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 99-09-13 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot2 3
2003 oct 09 6 nxp semico nductors product data sheet 50 v, 2 a pnp low v cesat (biss) transistor PBSS5250T data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands r75/01/pp7 date of release: 2003 oct 09 document order number: 9397 750 11904
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